Patterning device utilizing sets of stepped mirrors and method of using same

ABSTRACT

A system and method are used to independently control multiple parameters of a patterned beam. This can be performed using a patterning device configured to pattern a beam of radiation comprising a controller and an array of stepped mirrors. The array comprises a plurality of sets of four of the stepped mirrors that are controlled with respect to each other. Adjacent ones of the stepped mirrors in each of the sets have perpendicular axes of rotation and perpendicular steps. In one example, the patterning device is used to patterned the beam of radiation, which patterned beam is projected onto an object. For example, the object can be a substrate (e.g., semiconductor substrate or flat panel display substrate) or a display device.

BACKGROUND

1. Field of the Invention

The present invention relates a lithographic apparatus and devicemanufacturing method.

2. Related Art

A lithographic apparatus is a machine that applies a desired patternonto a substrate or part of a substrate. A lithographic apparatus can beused, for example, in the manufacture of flat panel displays, integratedcircuits (ICs) and other devices involving fine structures. In aconventional apparatus, a patterning device, which can be referred to asa mask or a reticle, can be used to generate a circuit patterncorresponding to an individual layer of a flat panel display (or otherdevice). This pattern can be transferred onto all or part of thesubstrate (e.g., a glass plate), by imaging onto a layer ofradiation-sensitive material (e.g., resist) provided on the substrate.

Instead of a circuit pattern, the patterning device can be used togenerate other patterns, for example a color filter pattern or a matrixof dots. Instead of a mask, the patterning device can be a patterningarray that comprises an array of individually controllable elements. Thepattern can be changed more quickly and for less cost in such a systemcompared to a mask-based system.

A flat panel display substrate is typically rectangular in shape.Lithographic apparatus designed to expose a substrate of this type canprovide an exposure region that covers a full width of the rectangularsubstrate, or covers a portion of the width (for example half of thewidth). The substrate can be scanned underneath the exposure region,while the mask or reticle is synchronously scanned through a beam. Inthis way, the pattern is transferred to the substrate. If the exposureregion covers the full width of the substrate then exposure can becompleted with a single scan. If the exposure region covers, forexample, half of the width of the substrate, then the substrate can bemoved transversely after the first scan, and a further scan is typicallyperformed to expose the remainder of the substrate.

An aerial image (looking up from the substrate) formed by the patterningdevice can be non-telecentric with respect to the surface of thesubstrate, can have a non-uniform intensity profile, can have anon-uniform polarization profile, or similar optical properties“errors.” Typically, through control of each individually controllableelements within an array of individually controllable elements formed onthe patterning device, one of the parameters can be corrected. However,in order to correct for more than one of these parameters, sets ofindividually controllable elements within the array are controlledtogether. The sets can include, two, three, four, etc. individuallycontrollable devices, sometimes called a super pixel. However, even whenusing these sets or super pixels, the optical property errors can onlybe reduced, but not always eliminated. Also, many mask-based patterns(e.g., phase shift masks, alternating phase shift masks) can beeffectively emulated by a maskless lithography system.

Therefore, what is needed is a more effective and efficient patterningdevice architecture and control arrangement.

SUMMARY

In one embodiment of the present invention, there is provided apatterning device configured to pattern a beam of radiation. Thepatterning device comprises a controller and an array of steppedmirrors. The array comprises a plurality of sets of the stepped mirrorsthat are controlled with respect to each other. Adjacent ones of thestepped mirrors in each of the sets have perpendicular axes of rotationand perpendicular steps.

In another embodiment of the present invention, the patterned beam ofradiation is projected onto an object. For example, the object can be asubstrate patterned by a lithography system (e.g., semiconductorsubstrate or flat panel display substrate) or a display device.

In a further embodiment of the present invention, there is provided amethod comprising the following steps. Rotating a first stepped mirror,in a set of four stepped mirrors, having a first step position and firstrotation direction to a first rotation angle. Rotating a second steppedmirror in the set having a second step position and a second rotationdirection to the first rotation angle. Rotating a third stepped mirrorin the set having a third step position and a third rotation directionto a second rotation angle that is equal, but opposite, to the firstrotation angle. Rotating a fourth stepped mirror in the set having afourth step position and a fourth rotation direction to the secondrotation angle.

In yet another embodiment of the present invention, the rotation stepsare used to pattern a beam of radiation, which patterned beam isprojected onto an object. For example, the object can be a substratepatterned by a lithography system (e.g., semiconductor substrate or flatpanel display substrate) or a display device.

Further embodiments, features, and advantages of the present inventions,as well as the structure and operation of the various embodiments of thepresent invention, are described in detail below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate one or more embodiments of the presentinvention and, together with the description, further serve to explainthe principles of the invention and to enable a person skilled in thepertinent art to make and use the invention.

FIGS. 1 and 2 depict lithographic apparatus, according to variousembodiments of the present invention.

FIG. 3 depicts a mode of transferring a pattern to a substrate accordingto one embodiment of the invention as shown in FIG. 2.

FIG. 4 depicts an arrangement of optical engines, according to oneembodiment of the present invention.

FIGS. 5 and 6 show one of a plurality of sets of four individuallycontrollable elements formed on a patterning device.

FIGS. 7 and 8 show a side view and tilted side view, respectively, offirst and second individually controllable devices.

FIG. 9 shows one of a plurality of sets of four individuallycontrollable elements formed on a patterning device.

FIG. 10 shows a flowchart depicting a method, according to oneembodiment of the present invention.

One or more embodiments of the present invention will now be describedwith reference to the accompanying drawings. In the drawings, likereference numbers can indicate identical or functionally similarelements. Additionally, the left-most digit(s) of a reference number canidentify the drawing in which the reference number first appears.

DETAILED DESCRIPTION

This specification discloses one or more embodiments that incorporatethe features of this invention. The disclosed embodiment(s) merelyexemplify the invention. The scope of the invention is not limited tothe disclosed embodiment(s). The invention is defined by the claimsappended hereto.

The embodiment(s) described, and references in the specification to “oneembodiment”, “an embodiment”, “an example embodiment”, etc., indicatethat the embodiment(s) described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases are not necessarily referring to the same embodiment.Further, when a particular feature, structure, or characteristic isdescribed in connection with an embodiment, it is understood that it iswithin the knowledge of one skilled in the art to effect such feature,structure, or characteristic in connection with other embodimentswhether or not explicitly described.

Embodiments of the invention may be implemented in hardware, firmware,software, or any combination thereof. Embodiments of the invention mayalso be implemented as instructions stored on a machine-readable medium,which may be read and executed by one or more processors. Amachine-readable medium may include any mechanism for storing ortransmitting information in a form readable by a machine (e.g., acomputing device). For example, a machine-readable medium may includeread only memory (ROM); random access memory (RAM); magnetic diskstorage media; optical storage media; flash memory devices; electrical,optical, acoustical or other forms of propagated signals (e.g., carrierwaves, infrared signals, digital signals, etc.), and others. Further,firmware, software, routines, instructions may be described herein asperforming certain actions. However, it should be appreciated that suchdescriptions are merely for convenience and that such actions in factresult from computing devices, processors, controllers, or other devicesexecuting the firmware, software, routines, instructions, etc.

FIG. 1 schematically depicts the lithographic apparatus 1 of oneembodiment of the invention. The apparatus comprises an illuminationsystem IL, a patterning device PD, a substrate table WT, and aprojection system PS. The illumination system (illuminator) IL isconfigured to condition a radiation beam B (e.g., UV radiation).

It is to be appreciated that, although the description is directed tolithography, the patterned device PD can be formed in a display system(e.g., in a LCD television or projector), without departing from thescope of the present invention. Thus, the projected patterned beam canbe projected onto many different types of objects, e.g., substrates,display devices, etc.

The substrate table WT is constructed to support a substrate (e.g., aresist-coated substrate) W and connected to a positioner PW configuredto accurately position the substrate in accordance with certainparameters.

The projection system (e.g., a refractive projection lens system) PS isconfigured to project the beam of radiation modulated by the array ofindividually controllable elements onto a target portion C (e.g.,comprising one or more dies) of the substrate W. The term “projectionsystem” used herein should be broadly interpreted as encompassing anytype of projection system, including refractive, reflective,catadioptric, magnetic, electromagnetic and electrostatic opticalsystems, or any combination thereof, as appropriate for the exposureradiation being used, or for other factors such as the use of animmersion liquid or the use of a vacuum. Any use of the term “projectionlens” herein can be considered as synonymous with the more general term“projection system.”

The illumination system can include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, fordirecting, shaping, or controlling radiation.

The patterning device PD (e.g., a reticle or mask or an array ofindividually controllable elements) modulates the beam. In general, theposition of the array of individually controllable elements will befixed relative to the projection system PS. However, it can instead beconnected to a positioner configured to accurately position the array ofindividually controllable elements in accordance with certainparameters.

The term “patterning device” or “contrast device” used herein should bebroadly interpreted as referring to any device that can be used tomodulate the cross-section of a radiation beam, such as to create apattern in a target portion of the substrate. The devices can be eitherstatic patterning devices (e.g., masks or reticles) or dynamic (e.g.,arrays of programmable elements) patterning devices. For brevity, mostof the description will be in terms of a dynamic patterning device,however it is to be appreciated that a static pattern device can also beused without departing from the scope of the present invention.

It should be noted that the pattern imparted to the radiation beam maynot exactly correspond to the desired pattern in the target portion ofthe substrate, for example if the pattern includes phase-shiftingfeatures or so called assist features. Similarly, the pattern eventuallygenerated on the substrate may not correspond to the pattern formed atany one instant on the array of individually controllable elements. Thiscan be the case in an arrangement in which the eventual pattern formedon each part of the substrate is built up over a given period of time ora given number of exposures during which the pattern on the array ofindividually controllable elements and/or the relative position of thesubstrate changes.

Generally, the pattern created on the target portion of the substratewill correspond to a particular functional layer in a device beingcreated in the target portion, such as an integrated circuit or a flatpanel display (e.g., a color filter layer in a flat panel display or athin film transistor layer in a flat panel display). Examples of suchpatterning devices include reticles, programmable mirror arrays, laserdiode arrays, light emitting diode arrays, grating light valves, and LCDarrays.

Patterning devices whose pattern is programmable with the aid ofelectronic means (e.g., a computer), such as patterning devicescomprising a plurality of programmable elements (e.g., all the devicesmentioned in the previous sentence except for the reticle), arecollectively referred to herein as “contrast devices.” The patterningdevice comprises at least 10, at least 100, at least 1,000, at least10,000, at least 100,000, at least 1,000,000, or at least 10,000,000programmable elements.

A programmable mirror array can comprise a matrix-addressable surfacehaving a viscoelastic control layer and a reflective surface. The basicprinciple behind such an apparatus is that addressed areas of thereflective surface reflect incident light as diffracted light, whereasunaddressed areas reflect incident light as undiffracted light. Using anappropriate spatial filter, the undiffracted light can be filtered outof the reflected beam, leaving only the diffracted light to reach thesubstrate. In this manner, the beam becomes patterned according to theaddressing pattern of the matrix-addressable surface.

It will be appreciated that, as an alternative, the filter can filterout the diffracted light, leaving the undiffracted light to reach thesubstrate.

An array of diffractive optical MEMS devices (micro-electromechanicalsystem devices) can also be used in a corresponding manner. In oneexample, a diffractive optical MEMS device is composed of a plurality ofreflective ribbons that can be deformed relative to one another to forma grating that reflects incident light as diffracted light.

A further alternative example of a programmable mirror array employs amatrix arrangement of tiny mirrors, each of which can be individuallytilted about an axis by applying a suitable localized electric field, orby employing piezoelectric actuation means. Once again, the mirrors arematrix-addressable, such that addressed mirrors reflect an incomingradiation beam in a different direction than unaddressed mirrors; inthis manner, the reflected beam can be patterned according to theaddressing pattern of the matrix-addressable mirrors. The requiredmatrix addressing can be performed using suitable electronic means.

Another example PD is a programmable LCD array.

The lithographic apparatus can comprise one or more contrast devices.For example, it can have a plurality of arrays of individuallycontrollable elements, each controlled independently of each other. Insuch an arrangement, some or all of the arrays of individuallycontrollable elements can have at least one of a common illuminationsystem (or part of an illumination system), a common support structurefor the arrays of individually controllable elements, and/or a commonprojection system (or part of the projection system).

In one example, such as the embodiment depicted in FIG. 1, the substrateW has a substantially circular shape, optionally with a notch and/or aflattened edge along part of its perimeter. In another example, thesubstrate has a polygonal shape, e.g., a rectangular shape.

Examples where the substrate has a substantially circular shape includeexamples where the substrate has a diameter of at least 25 mm, at least50 mm, at least 75 mm, at least 100 mm, at least 125 mm, at least 150mm, at least 175 mm, at least 200 mm, at least 250 mm, or at least 300mm. Alternatively, the substrate has a diameter of at most 500 mm, atmost 400 mm, at most 350 mm, at most 300 mm, at most 250 mm, at most 200mm, at most 150 mm, at most 100 mm, or at most 75 mm.

Examples where the substrate is polygonal, e.g., rectangular, includeexamples where at least one side, at least 2 sides or at least 3 sides,of the substrate has a length of at least 5 cm, at least 25 cm, at least50 cm, at least 100 cm, at least 150 cm, at least 200 cm, or at least250 cm.

At least one side of the substrate has a length of at most 1000 cm, atmost 750 cm, at most 500 cm, at most 350 cm, at most 250 cm, at most 150cm, or at most 75 cm.

In one example, the substrate W is a wafer, for instance a semiconductorwafer. The wafer material can be selected from the group consisting ofSi, SiGe, SiGeC, SiC, Ge, GaAs, InP, and InAs. The wafer may be: a III/Vcompound semiconductor wafer, a silicon wafer, a ceramic substrate, aglass substrate, or a plastic substrate. The substrate may betransparent (for the naked human eye), colored, or absent a color.

The thickness of the substrate can vary and, to an extent, can depend onthe substrate material and/or the substrate dimensions. The thicknesscan be at least 50 μm, at least 100 μm, at least 200 μm, at least 300μm, at least 400 μm, at least 500 μm, or at least 600 μm. Alternatively,the thickness of the substrate may be at most 5000 cm, at most 3500 μm,at most 2500 μm, at most 1750 μm, at most 1250 μm, at most 1000 μm, atmost 800 μm, at most 600 μm, at most 500 μm, at most 400 μm, or at most300 μm.

The substrate referred to herein can be processed, before or afterexposure, in for example a track (a tool that typically applies a layerof resist to a substrate and develops the exposed resist), a metrologytool, and/or an inspection tool. In one example, a resist layer isprovided on the substrate.

The projection system can image the pattern on the array of individuallycontrollable elements, such that the pattern is coherently formed on thesubstrate. Alternatively, the projection system can image secondarysources for which the elements of the array of individually controllableelements act as shutters. In this respect, the projection system cancomprise an array of focusing elements such as a micro lens array (knownas an MLA) or a Fresnel lens array to form the secondary sources and toimage spots onto the substrate. The array of focusing elements (e.g.,MLA) comprises at least 10 focus elements, at least 100 focus elements,at least 1,000 focus elements, at least 10,000 focus elements, at least100,000 focus elements, or at least 1,000,000 focus elements.

The number of individually controllable elements in the patterningdevice is equal to or greater than the number of focusing elements inthe array of focusing elements. One or more (e.g., 1,000 or more, themajority, or each) of the focusing elements in the array of focusingelements can be optically associated with one or more of theindividually controllable elements in the array of individuallycontrollable elements, with 2 or more, 3 or more, 5 or more, 10 or more,20 or more, 25 or more, 35 or more, or 50 or more of the individuallycontrollable elements in the array of individually controllableelements.

The MLA may be movable (e.g., with the use of one or more actuators) atleast in the direction to and away from the substrate. Being able tomove the MLA to and away from the substrate allows, e.g., for focusadjustment without having to move the substrate.

As herein depicted in FIGS. 1 and 2, the apparatus is of a reflectivetype (e.g., employing a reflective array of individually controllableelements). Alternatively, the apparatus can be of a transmission type(e.g., employing a transmission array of individually controllableelements).

The lithographic apparatus can be of a type having two (dual stage) ormore substrate tables. In such “multiple stage” machines, the additionaltables can be used in parallel, or preparatory steps can be carried outon one or more tables while one or more other tables are being used forexposure.

The lithographic apparatus can also be of a type wherein at least aportion of the substrate can be covered by an “immersion liquid” havinga relatively high refractive index, e.g., water, so as to fill a spacebetween the projection system and the substrate. An immersion liquid canalso be applied to other spaces in the lithographic apparatus, forexample, between the patterning device and the projection system.Immersion techniques are well known in the art for increasing thenumerical aperture of projection systems. The term “immersion” as usedherein does not mean that a structure, such as a substrate, must besubmerged in liquid, but rather only means that liquid is locatedbetween the projection system and the substrate during exposure.

Referring again to FIG. 1, the illuminator IL receives a radiation beamfrom a radiation source SO. The radiation source provides radiationhaving a wavelength of at least 5 nm, at least 10 nm, at least 11-13 nm,at least 50 nm, at least 100 nm, at least 150 nm, at least 175 nm, atleast 200 nm, at least 250 nm, at least 275 nm, at least 300 nm, atleast 325 nm, at least 350 nm, or at least 360 nm. Alternatively, theradiation provided by radiation source SO has a wavelength of at most450 nm, at most 425 nm, at most 375 nm, at most 360 nm, at most 325 nm,at most 275 nm, at most 250 nm, at most 225 nm, at most 200 nm, or atmost 175 nm. The radiation may have a wavelength including 436 nm, 405nm, 365 nm, 355 nm, 248 nm, 193 nm, 157 nm, and/or 126 nm.

The source and the lithographic apparatus can be separate entities, forexample when the source is an excimer laser. In such cases, the sourceis not considered to form part of the lithographic apparatus and theradiation beam is passed from the source SO to the illuminator IL withthe aid of a beam delivery system BD comprising, for example, suitabledirecting mirrors and/or a beam expander. In other cases the source canbe an integral part of the lithographic apparatus, for example when thesource is a mercury lamp. The source SO and the illuminator IL, togetherwith the beam delivery system BD if required, can be referred to as aradiation system.

The illuminator IL, can comprise an adjuster AD for adjusting theangular intensity distribution of the radiation beam. Generally, atleast the outer and/or inner radial extent (commonly referred to asσ-outer and σ-inner, respectively) of the intensity distribution in apupil plane of the illuminator can be adjusted. In addition, theilluminator IL can comprise various other components, such as anintegrator IN and a condenser CO. The illuminator can be used tocondition the radiation beam to have a desired uniformity and intensitydistribution in its cross-section. The illuminator IL, or an additionalcomponent associated with it, can also be arranged to divide theradiation beam into a plurality of sub-beams that can, for example, eachbe associated with one or a plurality of the individually controllableelements of the array of individually controllable elements. Atwo-dimensional diffraction grating can, for example, be used to dividethe radiation beam into sub-beams. In the present description, the terms“beam of radiation” and “radiation beam” encompass, but are not limitedto, the situation in which the beam is comprised of a plurality of suchsub-beams of radiation.

The radiation beam B is incident on the patterning device PD (e.g., anarray of individually controllable elements) and is modulated by thepatterning device. Having been reflected by the patterning device PD,the radiation beam B passes through the projection system PS, whichfocuses the beam onto a target portion C of the substrate W. With theaid of the positioner PW and position sensor IF2 (e.g., aninterferometric device, linear encoder, capacitive sensor, or the like),the substrate table WT can be moved accurately, e.g., so as to positiondifferent target portions C in the path of the radiation beam B. Whereused, the positioning means for the array of individually controllableelements can be used to correct accurately the position of thepatterning device PD with respect to the path of the beam B, e.g.,during a scan.

In one example, movement of the substrate table WT is realized with theaid of a long-stroke module (course positioning) and a short-strokemodule (fine positioning), which are not explicitly depicted in FIG. 1.In another example, a short stroke stage may not be present. A similarsystem can also be used to position the array of individuallycontrollable elements. It will be appreciated that the beam B canalternatively/additionally be moveable, while the object table and/orthe array of individually controllable elements can have a fixedposition to provide the required relative movement. Such an arrangementcan assist in limiting the size of the apparatus. As a furtheralternative, which can, e.g., be applicable in the manufacture of flatpanel displays, the position of the substrate table WT and theprojection system PS can be fixed and the substrate W can be arranged tobe moved relative to the substrate table WT. For example, the substratetable WT can be provided with a system for scanning the substrate Wacross it at a substantially constant velocity.

As shown in FIG. 1, the beam of radiation B can be directed to thepatterning device PD by means of a beam splitter BS configured such thatthe radiation is initially reflected by the beam splitter and directedto the patterning device PD. It should be realized that the beam ofradiation B can also be directed at the patterning device without theuse of a beam splitter. The beam of radiation can be directed at thepatterning device at an angle between 0 and 90°, between 5 and 85°,between 15 and 75°, between 25 and 65°, or between 35 and 550 (theembodiment shown in FIG. 1 is at a 90° angle). The patterning device PDmodulates the beam of radiation B and reflects it back to the beamsplitter BS which transmits the modulated beam to the projection systemPS. It will be appreciated, however, that alternative arrangements canbe used to direct the beam of radiation B to the patterning device PDand subsequently to the projection system PS. In particular, anarrangement such as is shown in FIG. 1 may not be required if atransmission patterning device is used.

The depicted apparatus can be used in several modes:

1. In step mode, the array of individually controllable elements and thesubstrate are kept essentially stationary, while an entire patternimparted to the radiation beam is projected onto a target portion C atone go (i.e., a single static exposure). The substrate table WT is thenshifted in the X and/or Y direction so that a different target portion Ccan be exposed. In step mode, the maximum size of the exposure fieldlimits the size of the target portion C imaged in a single staticexposure.

2. In scan mode, the array of individually controllable elements and thesubstrate are scanned synchronously while a pattern imparted to theradiation beam is projected onto a target portion C (i.e., a singledynamic exposure). The velocity and direction of the substrate relativeto the array of individually controllable elements can be determined bythe (de-) magnification and image reversal characteristics of theprojection system PS. In scan mode, the maximum size of the exposurefield limits the width (in the non-scanning direction) of the targetportion in a single dynamic exposure, whereas the length of the scanningmotion determines the height (in the scanning direction) of the targetportion.

3. In pulse mode, the array of individually controllable elements iskept essentially stationary and the entire pattern is projected onto atarget portion C of the substrate W using a pulsed radiation source. Thesubstrate table WT is moved with an essentially constant speed such thatthe beam B is caused to scan a line across the substrate W. The patternon the array of individually controllable elements is updated asrequired between pulses of the radiation system and the pulses are timedsuch that successive target portions C are exposed at the requiredlocations on the substrate W. Consequently, the beam B can scan acrossthe substrate W to expose the complete pattern for a strip of thesubstrate. The process is repeated until the complete substrate W hasbeen exposed line by line.

4. Continuous scan mode is essentially the same as pulse mode exceptthat the substrate W is scanned relative to the modulated beam ofradiation B at a substantially constant speed and the pattern on thearray of individually controllable elements is updated as the beam Bscans across the substrate W and exposes it. A substantially constantradiation source or a pulsed radiation source, synchronized to theupdating of the pattern on the array of individually controllableelements, can be used.

5. In pixel grid imaging mode, which can be performed using thelithographic apparatus of FIG. 2, the pattern formed on substrate W isrealized by subsequent exposure of spots formed by a spot generator thatare directed onto patterning device PD. The exposed spots havesubstantially the same shape. On substrate W the spots are printed insubstantially a grid. In one example, the spot size is larger than apitch of a printed pixel grid, but much smaller than the exposure spotgrid. By varying intensity of the spots printed, a pattern is realized.In between the exposure flashes the intensity distribution over thespots is varied.

Combinations and/or variations on the above described modes of use orentirely different modes of use can also be employed.

In lithography, a pattern is exposed on a layer of resist on thesubstrate. The resist is then developed. Subsequently, additionalprocessing steps are performed on the substrate. The effect of thesesubsequent processing steps on each portion of the substrate depends onthe exposure of the resist. In particular, the processes are tuned suchthat portions of the substrate that receive a radiation dose above agiven dose threshold respond differently to portions of the substratethat receive a radiation dose below the dose threshold. For example, inan etching process, areas of the substrate that receive a radiation doseabove the threshold are protected from etching by a layer of developedresist. However, in the post-exposure development, the portions of theresist that receive a radiation dose below the threshold are removed andtherefore those areas are not protected from etching. Accordingly, adesired pattern can be etched. In particular, the individuallycontrollable elements in the patterning device are set such that theradiation that is transmitted to an area on the substrate within apattern feature is at a sufficiently high intensity that the areareceives a dose of radiation above the dose threshold during theexposure. The remaining areas on the substrate receive a radiation dosebelow the dose threshold by setting the corresponding individuallycontrollable elements to provide a zero or significantly lower radiationintensity.

In practice, the radiation dose at the edges of a pattern feature doesnot abruptly change from a given maximum dose to zero dose even if theindividually controllable elements are set to provide the maximumradiation intensity on one side of the feature boundary and the minimumradiation intensity on the other side. Instead, due to diffractiveeffects, the level of the radiation dose drops off across a transitionzone. The position of the boundary of the pattern feature ultimatelyformed by the developed resist is determined by the position at whichthe received dose drops below the radiation dose threshold. The profileof the drop-off of radiation dose across the transition zone, and hencethe precise position of the pattern feature boundary, can be controlledmore precisely by setting the individually controllable elements thatprovide radiation to points on the substrate that are on or near thepattern feature boundary. These can be not only to maximum or minimumintensity levels, but also to intensity levels between the maximum andminimum intensity levels. This is commonly referred to as “grayscaling.”

Grayscaling provides greater control of the position of the patternfeature boundaries than is possible in a lithography system in which theradiation intensity provided to the substrate by a given individuallycontrollable element can only be set to two values (e.g., just a maximumvalue and a minimum value). At least 3, at least 4 radiation intensityvalues, at least 8 radiation intensity values, at least 16 radiationintensity values, at least 32 radiation intensity values, at least 64radiation intensity values, at least 128 radiation intensity values, orat least 256 different radiation intensity values can be projected ontothe substrate.

It should be appreciated that grayscaling can be used for additional oralternative purposes to that described above. For example, theprocessing of the substrate after the exposure can be tuned, such thatthere are more than two potential responses of regions of the substrate,dependent on received radiation dose level. For example, a portion ofthe substrate receiving a radiation dose below a first thresholdresponds in a first manner; a portion of the substrate receiving aradiation dose above the first threshold but below a second thresholdresponds in a second manner; and a portion of the substrate receiving aradiation dose above the second threshold responds in a third manner.Accordingly, grayscaling can be used to provide a radiation dose profileacross the substrate having more than two desired dose levels. Theradiation dose profile can have at least 2 desired dose levels, at least3 desired radiation dose levels, at least 4 desired radiation doselevels, at least 6 desired radiation dose levels or at least 8 desiredradiation dose levels.

It should further be appreciated that the radiation dose profile can becontrolled by methods other than by merely controlling the intensity ofthe radiation received at each point on the substrate, as describedabove. For example, the radiation dose received by each point on thesubstrate can alternatively or additionally be controlled by controllingthe duration of the exposure of the point. As a further example, eachpoint on the substrate can potentially receive radiation in a pluralityof successive exposures. The radiation dose received by each point can,therefore, be alternatively or additionally controlled by exposing thepoint using a selected subset of the plurality of successive exposures.

FIG. 2 depicts an arrangement of the apparatus according to the presentinvention that can be used, e.g., in the manufacture of flat paneldisplays. Components corresponding to those shown in FIG. 1 are depictedwith the same reference numerals. Also, the above descriptions of thevarious embodiments, e.g., the various configurations of the substrate,the contrast device, the MLA, the beam of radiation, etc., remainapplicable.

As shown in FIG. 2, the projection system PS includes a beam expander,which comprises two lenses L1, L2. The first lens L1 is arranged toreceive the modulated radiation beam B and focus it through an aperturein an aperture stop AS. A further lens AL can be located in theaperture. The radiation beam B then diverges and is focused by thesecond lens L2 (e.g., a field lens).

The projection system PS further comprises an array of lenses MLAarranged to receive the expanded modulated radiation B. Differentportions of the modulated radiation beam B, corresponding to one or moreof the individually controllable elements in the patterning device PD,pass through respective different lenses ML in the array of lenses MLA.Each lens focuses the respective portion of the modulated radiation beamB to a point which lies on the substrate W. In this way an array ofradiation spots S is exposed onto the substrate W. It will beappreciated that, although only eight lenses of the illustrated array oflenses 14 are shown, the array of lenses can comprise many thousands oflenses (the same is true of the array of individually controllableelements used as the patterning device PD).

FIG. 3 illustrates schematically how a pattern on a substrate W isgenerated using the system of FIG. 2, according to one embodiment of thepresent invention. The filled in circles represent the array of spots Sprojected onto the substrate W by the array of lenses MLA in theprojection system PS. The substrate W is moved relative to theprojection system PS in the Y direction as a series of exposures areexposed on the substrate W. The open circles represent spot exposures SEthat have previously been exposed on the substrate W. As shown, eachspot projected onto the substrate by the array of lenses within theprojection system PS exposes a row R of spot exposures on the substrateW. The complete pattern for the substrate is generated by the sum of allthe rows R of spot exposures SE exposed by each of the spots S. Such anarrangement is commonly referred to as “pixel grid imaging,” discussedabove.

It can be seen that the array of radiation spots S is arranged at anangle θ relative to the substrate W (the edges of the substrate lieparallel to the X and Y directions). This is done so that when thesubstrate is moved in the scanning direction (the Y-direction), eachradiation spot will pass over a different area of the substrate, therebyallowing the entire substrate to be covered by the array of radiationspots 15. The angle θ can be at most 20°, at most 10°, at most 5°, atmost 3°, at most 1°, at most 0.5°, at most 0.25°, at most 0.10°, at most0.05°, or at most 0.01°. Alternatively, the angle θ is at least 0.001°.

FIG. 4 shows schematically how an entire flat panel display substrate Wcan be exposed in a single scan using a plurality of optical engines,according to one embodiment of the present invention. In the exampleshown eight arrays SA of radiation spots S are produced by eight opticalengines (not shown), arranged in two rows R1, R2 in a “chess board”configuration, such that the edge of one array of radiation spots (e.g.,spots S in FIG. 3) slightly overlaps (in the scanning direction Y) withthe edge of the adjacent array of radiation spots. In one example, theoptical engines are arranged in at least 3 rows, for instance 4 rows or5 rows. In this way, a band of radiation extends across the width of thesubstrate W, allowing exposure of the entire substrate to be performedin a single scan. It will be appreciated that any suitable number ofoptical engines can be used. In one example, the number of opticalengines is at least 1, at least 2, at least 4, at least 8, at least 10,at least 12, at least 14, or at least 17. Alternatively, the number ofoptical engines is less than 40, less than 30 or less than 20.

Each optical engine can comprise a separate illumination system IL,patterning device PD and projection system PS as described above. It isto be appreciated, however, that two or more optical engines can shareat least a part of one or more of the illumination system, patterningdevice and projection system.

FIG. 5 shows one of a plurality of sets 500 of four individuallycontrollable elements 502 to 508 that are controlled with respect toeach other, which are formed on a patterning device PD (not shown). Inthis example, the individually controllable elements 502, 504, 506, and508 are stepped mirrors that are anchored to rotate around theirrotation axes in the directions shown by the arrows to a range ofrotation angles +/−θ. In this perspective, all the elements 502 to 508rotate about an X axis. Thus, the rotation angle θ at which rotationstops can be one of many positive or negative rotations angles in anallowed range of angles. In one example, the mirrors 502 to 508 can bemade from aluminum or other materials (e.g., silicon carbide) coatedwith aluminum. The steps 510, 512, 514, and 516 can be quarterwavelength (λ) steps. Stepped mirrors 502 to 508 have a same profile andcross-sectional structure. Through using four stepped mirrors 502 to 508in each set 500 in an alternating configurations of step position andpositive or negative rotation angles, up to four optical parameters canbe corrected through the individual control of these mirrors. Althoughthis arrangement can substantially reduce optical property errors, itmay not be able to eliminate such errors. Also, certain types of masksmay still be not be able to be emulated by this arrangement, for examplealternating phase shift masks.

Also, behavior of set 500 can be dependent on a polarization of theillumination beam B. A datapath will calculate a different set of tiltangles (solutions) for both polarizations components in beam B (e.g., TEand TM). This is because reflection properties from the stepped mirrorare different for the different polarization components. For polarizedillumination schemes (e.g., quadrupole) this is problematic.

FIG. 6 shows one of a plurality of sets 600 of four individuallycontrollable elements 602 to 608 that are controlled with respect toeach other which are formed on a patterning device PD (not shown). Inthis example, the individually controllable elements 602, 604, 606, and608 are stepped mirrors that are anchored to rotate around theirrotation axes in the directions shown by the arrows to a rotation angleθ. In the perspective shown, elements 602 and 606 rotate about an Xaxis, while elements 604 and 608 rotate with respect to an X-Y plane.The rotation angle θ can be one of many positive or negative rotationsangles in an allowed range of angles. The steps 610, 612, 614, and 616can be quarter wavelength steps. One difference between set 600 comparedto set 500 is that in set 600 there are two types of mirrors formed,e.g., one with a positive (+) λ/4 step and one with a negative (−) λ/4step (see also FIGS. 7 and 8). Another difference between set 600 andset 500 is that each of the four stepped mirrors is different in set600, e.g., either differently oriented or having different overallstructures (see also FIG. 9). This variation in stepped mirrors allowsfor control over more variables of the patterning device PD, whichallows for a more effective compensation, and virtual elimination, ofthe above-described errors.

Also, the configuration of set 600 allows for polarization independentbehavior (taking all tilts to be equal within set 600). A datapath willcalculate an equal set of tilt angles for both polarization states (TEand TM) for polarized illumination profiles.

FIGS. 7 and 8 show a side view and tilted side view, respectively, offirst and second configurations for individually controllable elements720 and 722. For example, one or both of these individually controllableelement configurations can be used in set 600, as best seen in FIG. 9.

Individually controllable element 720 can be a stepped mirror having afirst portion 724 and a second portion 726. Second portion 726 can beformed through depositing material on first portion 724. The step formedby second portion 726 can have a λ/4 thickness (e.g., +λ/4 thickness orheight) above first portion 724. Thus, when using X as the height offirst portion 724, an overall height or thickness of stepped mirror 720can be X+λ/4.

Individually controllable element 722 can be a stepped mirror having afirst portion 724 and a second portion 728 (i.e., an area or spaceformed through removal of material from first portion 724). For example,second portion 728 can be formed through etching of material from firstportion 724. The step formed by first portion 724 can have a λ/4 heightabove second portion 728 (e.g., second portion has a −λ/4 thickness orheight) relative to first portion 724. Thus, stepped mirror 722 has anoverall height of X.

Thus, in this example, a difference in step heights between the +λ/4“step” 726 in element 720 compared to the −λ/4 “step” 728 in element 722is λ/2.

As seen in FIG. 8, when rotating stepped mirrors 602 to 608 in set 600as shown in FIG. 7, illumination beam B will form different shadows whenreflecting from stepped mirror 720 compared to stepped mirror 722.However, through using the varying orientations for the four steppedmirrors 602 to 608, these shadows are offset.

FIG. 9 shows one of a plurality of sets 900 of four individuallycontrollable elements 902 to 908 that are controlled with respect toeach other, which are formed on a patterning device PD (not shown). Inthis example, the individually controllable elements 902, 904, 906, and908 are stepped mirrors that are anchored to rotate around theirrotation axes in the directions shown by the arrows to a rotation angleθ. In the perspective shown, elements 902 and 906 rotate about an Xaxis, while elements 904 and 908 rotate with respect to an X-Y plane.The rotation angle θ can be one of many positive or negative rotationsangles in an allowed range of angles. For example, although in differentorientations, stepped mirrors 902 and 904 in each set 900 can bestructured similarly to stepped mirror 722, and mirrors 906 and 908 canbe structured similarly to stepped mirror 720. Through using sets 900 ofstepped mirrors 902 to 908, the differing profiles, orientations, andtilting directions and angles multiple optical parameters can beindependently controlled. Through independent controlling of theseparameters, an image formed on a substrate W (or display device) (notshown) is telecentric and has uniform intensity and polarizationprofiles.

It is to be appreciated that, although four stepped mirrors are shownfor each set of stepped mirrors in the examples of FIGS. 5 to 9, eachset of the stepped mirrors can include any number of mirrors based on adesired application of the patterning device PD.

FIG. 10 shows a flowchart depicting a method 1000, according to oneembodiment of the present invention. In step 1002, a first steppedmirror, which is in a set of four stepped mirrors, having a first stepposition and first rotation direction is rotated to a first rotationangle. In step 1004, a second stepped mirror in the set having a secondstep position and a second rotation direction is rotated to the firstrotation angle. In step 1006, a third stepped mirror in the set having athird step position and a third rotation direction is rotated to asecond rotation angle that is equal, but opposite, to the first rotationangle. In step 1008, a fourth stepped mirror in the set having a fourthstep position and a fourth rotation direction is rotated to the secondrotation angle.

In one example, the rotation steps are used to pattern a beam ofradiation, which patterned beam is projected onto an object. Forexample, the object can be a substrate patterned in a lithography system(e.g., semiconductor substrate or flat panel display substrate) or adisplay device.

Although specific reference can be made in this text to the use oflithographic apparatus in the manufacture of a specific device (e.g., anintegrated circuit or a flat panel display), it should be understoodthat the lithographic apparatus described herein can have otherapplications. Applications include, but are not limited to, themanufacture of integrated circuits, integrated optical systems, guidanceand detection patterns for magnetic domain memories, flat-paneldisplays, liquid-crystal displays (LCDs), thin-film magnetic heads,micro-electromechanical devices (MEMS), light emitting diodes (LEDs),etc. Also, for instance in a flat panel display, the present apparatuscan be used to assist in the creation of a variety of layers, e.g. athin film transistor layer and/or a color filter layer.

Although specific reference is made above to the use of embodiments ofthe invention in the context of optical lithography, it will beappreciated that the invention can be used in other applications, forexample imprint lithography, where the context allows, and is notlimited to optical lithography. In imprint lithography a topography in apatterning device defines the pattern created on a substrate. Thetopography of the patterning device can be pressed into a layer ofresist supplied to the substrate whereupon the resist is cured byapplying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

CONCLUSION

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only, and not limitation. It will be apparent to persons skilledin the relevant art that various changes in form and detail can be madetherein without departing from the spirit and scope of the invention.Thus, the breadth and scope of the present invention should not belimited by any of the above-described exemplary embodiments, but shouldbe defined only in accordance with the following claims and theirequivalents.

It is to be appreciated that the Detailed Description section, and notthe Summary and Abstract sections, is intended to be used to interpretthe claims. The Summary and Abstract sections can set forth one or more,but not all exemplary embodiments of the present invention ascontemplated by the inventor(s), and thus, are not intended to limit thepresent invention and the appended claims in any way.

1. A lithography apparatus, comprising: an illumination systemconfigured to condition a beam of radiation; a patterning deviceconfigured to pattern the beam of radiation, the patterning devicecomprising a controller and an array of stepped mirrors configured topattern the beam of radiation, the array comprising a plurality of setsof the stepped mirrors, the stepped mirrors being controlled by thecontroller with respect to each other, adjacent ones of the steppedmirrors in each of the sets having perpendicular axes of rotation andperpendicular steps; and a projection system configured to project thepatterned beam onto a target area of a substrate.
 2. The lithographyapparatus of claim 1, wherein the controller is configured to rotateadjacent ones of the stepped mirrors in each of the sets to equal, butopposite magnitude, tilt angles.
 3. The lithography apparatus of claim1, wherein the controller is configured to control the array to producean image corresponding to the patterned beam, the image beingtelecentric at the substrate.
 4. The lithography apparatus of claim 1,wherein the controller is configured to control the array to produce animage having a uniform polarization illumination profile at thesubstrate.
 5. The lithography apparatus of claim 1, wherein a step inthe stepped mirrors comprise a quarter of a wavelength step.
 6. Thelithography apparatus of claim 1, wherein the stepped mirrors areconfigured to rotate to multiple rotation angles.
 7. The lithographyapparatus of claim 1, wherein the controller is configured to controlthe array to form an image corresponding to the patterned beam at thesubstrate equivalent to an image formed by an alternating phase shiftmask.
 8. The lithography apparatus of claim 1, wherein: a first pair ofthe stepped mirrors in each of the sets has a first step position; and asecond pair of the stepped mirrors in each of the sets has a second stepposition, a difference between the first and second step positions beinghalf of a wavelength.
 9. A patterning device configured to pattern abeam of radiation, comprising: a controller; and an array of steppedmirrors, the array comprising a plurality of sets of the steppedmirrors, the stepped mirrors being controlled by the controller withrespect to each other, adjacent ones of the stepped mirrors in each ofthe sets having perpendicular axes of rotation and perpendicular steps.10. The patterning device of claim 9, wherein the controller isconfigured to rotate adjacent ones of the stepped mirrors in each of thesets to equal, but opposite magnitude, tilt angles.
 11. The patterningdevice of claim 9, wherein the controller is configured to control thearray to produce an image, the image being telecentric at the substrate.12. The patterning device of claim 9, wherein the controller isconfigured to control the array to produce an image having a uniformpolarization illumination profile at a substrate or display device. 13.The patterning device of claim 9, wherein a step in the stepped mirrorscomprise a quarter of a wavelength step.
 14. The patterning device ofclaim 9, wherein the stepped mirrors are configured to rotate tomultiple rotation angles.
 15. The patterning device of claim 9, whereinthe controller is configured to control the array to form an image at asubstrate or display device equivalent to an image formed by analternating phase shift mask.
 16. The patterning device of claim 9,wherein: a first pair of the stepped mirrors in each of the sets has afirst step position; and a second pair of the stepped mirrors in each ofthe sets has a second step position, a difference between the first andsecond step positions being half of a wavelength.
 17. A method,comprising: (a) rotating a first stepped mirror, in a set of fourstepped mirrors, the first stepped mirror having a first step positionand first rotation direction to a first rotation angle; (b) rotating asecond stepped mirror in the set having a second step position and asecond rotation direction to the first rotation angle; (c) rotating athird stepped mirror in the set having a third step position and a thirdrotation direction to a second rotation angle that is equal, butopposite, to the first rotation angle; and (d) rotating a fourth steppedmirror in the set having a fourth step position and a fourth rotationdirection to the second rotation angle.
 18. The method of claim 17,further comprising: patterning a beam of radiation using a plurality ofthe sets of four stepped mirrors; and projecting the patterned beam ontoa target portion of an object.
 19. The method of claim 18, wherein theobject is a substrate or a display device.
 20. The method of claim 18,wherein steps (a)-(d) produce a telecentric image at the object.
 21. Themethod of claim 18, wherein steps (a)-(d) produce an image having auniform polarization illumination profile at the object.
 22. The methodof claim 17, further comprising forming the first through fourth stepsof the respective first through fourth stepped mirrors as quarter of awavelength steps.
 23. The method of claim 18, wherein the rotating stepsof the method of claim 18 (a)-(d) produce an image at the objectequivalent to an image formed by an alternating phase shift mask. 24.The method of claim 17, further comprising: using a first step positionfor a first pair of the stepped mirrors in each of the sets; and using asecond step position for a second pair of the stepped mirrors in each ofthe sets, a difference between the first and second step positions beinghalf of a wavelength.
 25. The method of claim 17, wherein: the first andthird stepped mirrors rotate above an X-axis; and the second and fourthstepped mirrors rotate with respect to an X-Y plane.
 26. The lithographyapparatus of claim 1, wherein the sets of the stepped mirrors includesfour of the stepped mirrors.
 27. The patterning device of claim 9,wherein the sets of the stepped mirrors includes four of the steppedmirrors.
 28. The lithography apparatus of claim 1, wherein eachrespective reflecting surface of the stepped mirrors comprise a steppedportion.
 29. The patterning device of claim 9, wherein the steppedmirrors comprise respective stepped reflecting surfaces.
 30. The methodof claim 17, wherein the stepped mirrors comprise reflecting surfaceseach having at least first and second two portions of differentthicknesses.